2SB817C-1E

Manufacturer :

onsemi

Product Category :

Транзисторы - Биполярные (BJT) - Одиночные

Current - Collector (Ic) (Max) :

12 A

Current - Collector Cutoff (Max) :

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A, 5V

Frequency - Transition :

10MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-3P-3, SC-65-3

Part Status :

Obsolete

Power - Max :

120 W

Supplier Device Package :

TO-3P-3L

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

2V @ 500mA, 5A

Voltage - Collector Emitter Breakdown (Max) :

140 V