- Manufacturer :
- onsemi
- Product Category :
- Транзисторы - Биполярные (BJT) - Одиночные
- Current - Collector (Ic) (Max) :
- 700 mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA, 2V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 125°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Part Status :
- Obsolete
- Power - Max :
- 200 mW
- Supplier Device Package :
- 3-CP
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 15 V
- Спецификации
- 2SB815-6-TB-E
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