2SB808G-SPA
- Mfr.Part #
- 2SB808G-SPA
- Manufacturer
- Rochester Electronics
- Package/Case
- -
- Datasheet
- Download
- Description
- SILICON EPITAXIAL PLANAR
- Manufacturer :
- Rochester Electronics
- Product Category :
- Транзисторы - Биполярные (BJT) - Одиночные
- Current - Collector (Ic) (Max) :
- -
- Current - Collector Cutoff (Max) :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Frequency - Transition :
- -
- Mounting Type :
- -
- Operating Temperature :
- -
- Package / Case :
- -
- Part Status :
- Active
- Power - Max :
- -
- Supplier Device Package :
- -
- Transistor Type :
- -
- Vce Saturation (Max) @ Ib, Ic :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- -
- Спецификации
- 2SB808G-SPA
Manufacturer related products
Catalog related products
related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| 2SB808F-SPA | Rochester Electronics | 21,994 | N-CHANNEL SILICON (DUAL GATE) |
| 2SB808F-SPA-ON | Rochester Electronics | 35,003 | N-CHANNEL SILICON (DUAL GATE) |
| 2SB808G-SPA-AC | Rochester Electronics | 20,000 | SILICON EPITAXIAL PLANAR |
| 2SB815-6-TB-E | onsemi | 3,000 | TRANS PNP 15V 700MA 3CP |
| 2SB815-6-TB-EX | Rochester Electronics | 120,000 | BIP PNP 0.7A 15V |
| 2SB815-7-TB-E | onsemi | 5,800 | TRANS PNP 15V 700MA 3CP |
| 2SB817C | Rochester Electronics | 18,437 | PNP SILICON TRANSISTOR |
| 2SB817C-1E | onsemi | 5,800 | TRANS PNP 140V 12A |
| 2SB817D | Rochester Electronics | 18,798 | P-CHANNEL, MOSFET |
| 2SB817D | Rochester Electronics | 1,357 | 2SB817 - P-CHANNEL SILICON MOSFE |
| 2SB824R | Rochester Electronics | 4,475 | POWER BIPOLAR TRANSISTOR, PNP |
| 2SB824S | Rochester Electronics | 2,000 | PNP SILICON TRANSISTOR |
| 2SB825R | Rochester Electronics | 6,125 | PNP SILICON TRANSISTOR |
| 2SB827R | Rochester Electronics | 10,612 | PNP SILICON TRANSISTOR |
| 2SB852KT146B | ROHM Semiconductor | 61 | TRANS PNP DARL 32V 0.3A SOT-346 |
