- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 9A (Tc)
- Drain to Source Voltage (Vdss) :
- 12 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 15 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® SC-75-6
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 2.5W (Ta), 13W (Tc)
- Rds On (Max) @ Id, Vgs :
- 19mOhm @ 3A, 4.5V
- Supplier Device Package :
- PowerPAK® SC-75-6
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±5V
- Vgs(th) (Max) @ Id :
- 800mV @ 250µA
- Datasheets
- SIB404DK-T1-GE3
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SIB406EDK-T1-GE3 | Vishay | 5 | MOSFET N-CH 20V 6A PPAK SC75-6 |
| SIB408DK-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 7A PPAK SC75-6 |
| SIB410DK-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 9A PPAK SC75-6 |
| SIB411DK-T1-E3 | Vishay | 5,800 | MOSFET P-CH 20V 9A PPAK SC75-6 |
| SIB411DK-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 20V 9A PPAK SC75-6 |
| SIB412DK-T1-E3 | Vishay | 5,800 | MOSFET N-CH 20V 9A PPAK SC75-6 |
| SIB412DK-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 20V 9A PPAK SC75-6 |
| SIB413DK-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 20V 9A PPAK SC75-6 |
| SIB414DK-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 8V 9A PPAK SC75-6 |
| SIB415DK-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 30V 9A PPAK SC75-6 |
| SIB417AEDK-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 8V 9A PPAK SC75-6 |
| SIB417DK-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 8V 9A PPAK SC75-6 |
| SIB417EDK-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 8V 9A PPAK SC75-6 |
| SIB419DK-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 12V 9A PPAK SC75-6 |
| SIB422EDK-T1-GE3 | Vishay | 70 | MOSFET N-CH 20V 9A PPAK SC75-6 |








