SIB412DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

10.16 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

535 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® SC-75-6

Part Status :

Obsolete

Power Dissipation (Max) :

2.4W (Ta), 13W (Tc)

Rds On (Max) @ Id, Vgs :

34mOhm @ 6.6A, 4.5V

Supplier Device Package :

PowerPAK® SC-75-6

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA