SI5857DU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

480 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® ChipFET™ Single

Part Status :

Obsolete

Power Dissipation (Max) :

2.3W (Ta), 10.4W (Tc)

Rds On (Max) @ Id, Vgs :

58mOhm @ 3.6A, 4.5V

Supplier Device Package :

PowerPAK® ChipFET™ Single

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.5V @ 250µA