SI5853CDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

11 nC @ 8 V

Input Capacitance (Ciss) (Max) @ Vds :

350 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Part Status :

Obsolete

Power Dissipation (Max) :

1.5W (Ta), 3.1W (Tc)

Rds On (Max) @ Id, Vgs :

104mOhm @ 2.5A, 4.5V

Supplier Device Package :

1206-8 ChipFET™

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA