- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 6.7A (Ta)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 77 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2714 pF @ 50 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 3W (Ta)
- Rds On (Max) @ Id, Vgs :
- 26mOhm @ 6.7A, 10V
- Supplier Device Package :
- 8-SO
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FDS3170N7
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
FDS3170N7 | Rochester Electronics | 179 | MOSFET N-CH 100V 6.7A 8SO |
FDS3512 | onsemi | 4,753 | MOSFET N-CH 80V 4A 8SOIC |
FDS3570 | Rochester Electronics | 279,272 | MOSFET N-CH 80V 9A 8SOIC |
FDS3570 | onsemi | 5,800 | MOSFET N-CH 80V 9A 8SOIC |
FDS3572 | onsemi | 5,800 | MOSFET N-CH 80V 8.9A 8SOIC |
FDS3572_NL | Rochester Electronics | 348 | N-CHANNEL POWER MOSFET |
FDS3580 | onsemi | 5,800 | MOSFET N-CH 80V 7.6A 8SOIC |
FDS3580 | Rochester Electronics | 5,800 | SMALL SIGNAL FIELD-EFFECT TRANSI |
FDS3590 | onsemi | 5,800 | MOSFET N-CH 80V 6.5A 8SOIC |
FDS3601 | Rochester Electronics | 55,664 | N-CHANNEL POWER MOSFET |
FDS3601 | onsemi | 5,800 | MOSFET 2N-CH 100V 1.3A 8SOIC |
FDS3612 | Rochester Electronics | 4,809 | MOSFET N-CH 100V 3.4A 8SOIC |
FDS3612 | onsemi | 5,800 | MOSFET N-CH 100V 3.4A 8SOIC |
FDS3670 | Rochester Electronics | 28,575 | MOSFET N-CH 100V 6.3A 8SOIC |
FDS3670 | onsemi | 5,800 | MOSFET N-CH 100V 6.3A 8SOIC |