- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 1.3A
- Drain to Source Voltage (Vdss) :
- 100V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 153pF @ 50V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Part Status :
- Obsolete
- Power - Max :
- 900mW
- Rds On (Max) @ Id, Vgs :
- 480mOhm @ 1.3A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FDS3601
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FDS3170N7 | Rochester Electronics | 179 | MOSFET N-CH 100V 6.7A 8SO |
| FDS3170N7 | onsemi | 5,800 | MOSFET N-CH 100V 6.7A 8SO |
| FDS3512 | onsemi | 4,753 | MOSFET N-CH 80V 4A 8SOIC |
| FDS3570 | Rochester Electronics | 279,272 | MOSFET N-CH 80V 9A 8SOIC |
| FDS3570 | onsemi | 5,800 | MOSFET N-CH 80V 9A 8SOIC |
| FDS3572 | onsemi | 5,800 | MOSFET N-CH 80V 8.9A 8SOIC |
| FDS3572_NL | Rochester Electronics | 348 | N-CHANNEL POWER MOSFET |
| FDS3580 | onsemi | 5,800 | MOSFET N-CH 80V 7.6A 8SOIC |
| FDS3580 | Rochester Electronics | 5,800 | SMALL SIGNAL FIELD-EFFECT TRANSI |
| FDS3590 | onsemi | 5,800 | MOSFET N-CH 80V 6.5A 8SOIC |
| FDS3601 | Rochester Electronics | 55,664 | N-CHANNEL POWER MOSFET |
| FDS3612 | Rochester Electronics | 4,809 | MOSFET N-CH 100V 3.4A 8SOIC |
| FDS3612 | onsemi | 5,800 | MOSFET N-CH 100V 3.4A 8SOIC |
| FDS3670 | Rochester Electronics | 28,575 | MOSFET N-CH 100V 6.3A 8SOIC |
| FDS3670 | onsemi | 5,800 | MOSFET N-CH 100V 6.3A 8SOIC |
