IPAN60R650CEXKSA1

Manufacturer :

Rochester Electronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9.9A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

Super Junction

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

20.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

440 pF @ 100 V

Mounting Type :

Through Hole

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Part Status :

Active

Power Dissipation (Max) :

28W (Tc)

Rds On (Max) @ Id, Vgs :

650mOhm @ 2.4A, 10V

Supplier Device Package :

PG-TO220-FP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 200µA