IPAN60R800CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8.4A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

Super Junction

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17.2 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

373 pF @ 100 V

Mounting Type :

Through Hole

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Part Status :

Active

Power Dissipation (Max) :

27W (Tc)

Rds On (Max) @ Id, Vgs :

800mOhm @ 2A, 10V

Supplier Device Package :

PG-TO220-FP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 170µA