FDMD86100
- Mfr.Part #
- FDMD86100
- Manufacturer
- Rochester Electronics
- Package/Case
- -
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR
- Manufacturer :
- Rochester Electronics
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 10A
- Drain to Source Voltage (Vdss) :
- 100V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Dual) Common Source
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2060pF @ 50V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerWDFN
- Part Status :
- Active
- Power - Max :
- 2.2W
- Rds On (Max) @ Id, Vgs :
- 10.5mOhm @ 10A, 10V
- Supplier Device Package :
- 8-Power 5x6
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FDMD86100
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