- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 10.4A
- Drain to Source Voltage (Vdss) :
- 100V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2230pF @ 50V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerWDFN
- Part Status :
- Obsolete
- Power - Max :
- 2.2W
- Rds On (Max) @ Id, Vgs :
- 9.9mOhm @ 10.4A, 10V
- Supplier Device Package :
- Power56
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FDMD85100
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FDMD82100 | onsemi | 5,800 | MOSFET 2N-CH 100V 7A 12POWER |
| FDMD82100 | Rochester Electronics | 5,800 | SMALL SIGNAL FIELD-EFFECT TRANSI |
| FDMD82100L | onsemi | 5,800 | MOSFET 2N-CH 100V 7A 6-MLP |
| FDMD8240L | onsemi | 5,800 | MOSFET 2N-CH 40V 23A |
| FDMD8240LET40 | onsemi | 5,800 | MOSFET 2N-CH 40V 24A POWER3.3X5 |
| FDMD8260L | onsemi | 5,800 | MOSFET 2N-CH 60V 15A 12POWER |
| FDMD8260L | Rochester Electronics | 5,800 | SMALL SIGNAL FIELD-EFFECT TRANSI |
| FDMD8260LET60 | Rochester Electronics | 5,800 | POWER FIELD-EFFECT TRANSISTOR, N |
| FDMD8260LET60 | onsemi | 5,800 | MOSFET 2N-CH 60V 15A 12POWER |
| FDMD8280 | Rochester Electronics | 5,800 | SMALL SIGNAL FIELD-EFFECT TRANSI |
| FDMD8280 | onsemi | 5,800 | MOSFET 2N-CH 80V 11A 12POWER |
| FDMD84100 | onsemi | 5,800 | MOSFET 2N-CH 100V 7A 8-PQFN |
| FDMD8430 | onsemi | 5,800 | FET ENGR DEV-NOT REL |
| FDMD8440L | Flip Electronics | 5,800 | FET ENGR DEV-NOT REL |
| FDMD8530 | onsemi | 5,800 | MOSFET 2N-CH 30V 35A |
