- Manufacturer：
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- EPC (51)
- EPC Space (7)
- GaNPower (9)
- Transphorm (6)
- Operating Temperature：
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- Mounting Type：
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- Package / Case：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- FET Feature：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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79 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Infineon Technologies | GAN HV |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | GANFET N-CH |
1 | 5,800 | Get Quote | |
|
|
Transphorm | GAN FET N-CH 650V P... |
1 | 5,800 | Get Quote | |
|
|
GaNPower | GANFET N-CH 650V 5A... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT 300V4A... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT 40V 8A... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT200V18A... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT 100V5A... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT100V30A... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT 40V30A... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT 60V 1A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | GAN HV PG-LSON-8 |
3,000 | 5,800 | Get Quote | |
|
|
GaNPower | GANFET N-CH 1200V ... |
1 | 5,800 | Get Quote | |
|
|
GaNPower | GANFET N-CH 1200V ... |
1 | 5,800 | Get Quote | |
|
|
GaNPower | GANFET N-CH 650V 15... |
1 | 5,800 | Get Quote | |
|
|
GaNPower | GANFET N-CH 650V 8A... |
1 | 5,800 | Get Quote | |
|
|
Transphorm | 650 V 95 A GAN FET |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | GANFET N-CH |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | GANFET N-CH |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | GANFET N-CH |
1 | 5,800 | Get Quote |
