FBG10N05AC

Mfr.Part #
FBG10N05AC
Manufacturer
EPC Space
Package/Case
-
Datasheet
Download
Description
GAN FET HEMT 100V5A COTS 4FSMD-A
Manufacturer :
EPC Space
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
5A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
5V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds :
233 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
4-SMD, No Lead
Part Status :
Active
Power Dissipation (Max) :
-
Rds On (Max) @ Id, Vgs :
44mOhm @ 5A, 5V
Supplier Device Package :
4-SMD
Technology :
GaNFET (Gallium Nitride)
Vgs (Max) :
+6V, -4V
Vgs(th) (Max) @ Id :
2.5V @ 1.2mA
Datasheets
FBG10N05AC

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Part Manufacturer Stock Description
FBG10N30BC EPC Space 5,800 GAN FET HEMT100V30A COTS 4FSMD-B