Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock
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IPD11DP10NMATMA1 Infineon Technologies
TRENCH >=100V PG-TO...
1 5,800 Get Quote
SPD30P06PGBTMA1 Infineon Technologies
MOSFET P-CH 60V 30A...
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IPD380P06NMATMA1 Infineon Technologies
MOSFET P-CH 60V 35A...
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