IPD11DP10NMATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.4A (Ta), 22A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

74 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3200 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Active

Power Dissipation (Max) :

3W (Ta), 125W (Tc)

Rds On (Max) @ Id, Vgs :

111mOhm @ 18A, 10V

Supplier Device Package :

PG-TO252-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1.7mA