- Manufacturer：
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- Power Dissipation (Max)：
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- FET Feature：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Vgs (Max)：
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11 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
- | SIC MOSFET, 1200V 50... |
1 | 120 | Get Quote | |
|
|
- | SIC MOSFET, 1200V 16... |
1 | 120 | Get Quote | |
|
|
Microchip Technology | MOSFET SIC 1700V 35 ... |
1 | 5,800 | Get Quote | |
|
|
Microchip Technology | SICFET N-CH 1200V 37... |
1 | 5,800 | Get Quote | |
|
|
GeneSiC Semiconductor | 3300V 50M TO-247-4 SIC ... |
1 | 5,800 | Get Quote | |
|
|
Microchip Technology | TRANS SJT N-CH 700V... |
1 | 31 | Get Quote | |
|
|
Microchip Technology | TRANS SJT 1700V TO2... |
1 | 80 | Get Quote | |
|
|
Microchip Technology | TRANS SJT N-CH 1200... |
1 | 56 | Get Quote | |
|
|
Microchip Technology | TRANS SJT N-CH 700V... |
1 | 52 | Get Quote | |
|
|
Microchip Technology | TRANS SJT N-CH 700V... |
1 | 195 | Get Quote | |
|
|
Microchip Technology | SICFET N-CH 1200V 66... |
1 | 176 | Get Quote |
