G2R50MT33K

Manufacturer :

GeneSiC Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

63A (Tc)

Drain to Source Voltage (Vdss) :

3300 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

Standard

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

340 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

7301 pF @ 1000 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-4

Part Status :

Active

Power Dissipation (Max) :

536W (Tc)

Rds On (Max) @ Id, Vgs :

50mOhm @ 40A, 20V

Supplier Device Package :

TO-247-4

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+25V, -10V

Vgs(th) (Max) @ Id :

3.5V @ 10mA (Typ)