HAT1126RWS-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

6A (Ta)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate, 4.5V Drive

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Part Status :

Obsolete

Power - Max :

3W (Ta)

Rds On (Max) @ Id, Vgs :

50mOhm @ 3A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.5V @ 1mA