HAT1069C-EL-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

4A (Ta)

Drain to Source Voltage (Vdss) :

12 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

16 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1380 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

6-SMD, Flat Leads

Part Status :

Obsolete

Power Dissipation (Max) :

900mW (Ta)

Rds On (Max) @ Id, Vgs :

52mOhm @ 1.5A, 4.5V

Supplier Device Package :

6-CMFPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.2V @ 1mA