FSB660A

Manufacturer :

onsemi

Product Category :

Транзисторы - Биполярные (BJT) - Одиночные

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 500mA, 2V

Frequency - Transition :

75MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Active

Power - Max :

500 mW

Supplier Device Package :

SOT-23-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

300mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

60 V