FSB649

Manufacturer :

onsemi

Product Category :

Транзисторы - Биполярные (BJT) - Одиночные

Current - Collector (Ic) (Max) :

3 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A, 2V

Frequency - Transition :

150MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Active

Power - Max :

500 mW

Supplier Device Package :

SOT-23-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

600mV @ 300mA, 3A

Voltage - Collector Emitter Breakdown (Max) :

25 V