- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- -
- Current - Collector Pulsed (Icm) :
- 60 A
- Gate Charge :
- -
- IGBT Type :
- Trench Field Stop
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- Die
- Part Status :
- Obsolete
- Power - Max :
- -
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- Wafer
- Switching Energy :
- -
- Td (on/off) @ 25°C :
- -
- Test Condition :
- -
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 15A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200 V
- Datasheets
- NGTD13T120F2WP
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NGTD13R120F2SWK | onsemi | 5,800 | DIODE GEN PURP 1.2KV DIE |
| NGTD13R120F2WP | onsemi | 5,800 | DIODE GEN PURP 1.2KV DIE |
| NGTD13T65F2SWK | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |
| NGTD13T65F2WP | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |
| NGTD14T65F2SWK | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |
| NGTD14T65F2WP | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |
| NGTD15R65F2SWK | onsemi | 5,800 | DIODE GEN PURP 650V DIE |
| NGTD15R65F2WP | onsemi | 5,800 | DIODE GEN PURP 650V DIE |
| NGTD17R120F2SWK | onsemi | 5,800 | DIODE GEN PURP 1.2KV DIE |
| NGTD17R120F2WP | onsemi | 5,800 | DIODE GEN PURP 1.2KV DIE |
| NGTD17T65F2SWK | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |
| NGTD17T65F2WP | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |
| NGTD20T120F2SWK | onsemi | 548 | IGBT TRENCH FIELD STOP 1200V DIE |
| NGTD20T120F2WP | onsemi | 5,800 | IGBT TRENCH FIELD STOP 1200V DIE |
| NGTD21T65F2SWK | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |
