GT8G133(TE12L,Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

-

Current - Collector Pulsed (Icm) :

150 A

Gate Charge :

-

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Part Status :

Obsolete

Power - Max :

600 mW

Reverse Recovery Time (trr) :

-

Supplier Device Package :

8-TSSOP

Switching Energy :

-

Td (on/off) @ 25°C :

1.7µs/2µs

Test Condition :

-

Vce(on) (Max) @ Vge, Ic :

2.9V @ 4V, 150A

Voltage - Collector Emitter Breakdown (Max) :

400 V