- Manufacturer :
 - onsemi
 
- Product Category :
 - Transistors - IGBTs - Single
 
- Current - Collector (Ic) (Max) :
 - 150 A
 
- Current - Collector Pulsed (Icm) :
 - 300 A
 
- Gate Charge :
 - 137 nC
 
- IGBT Type :
 - Trench Field Stop
 
- Input Type :
 - Standard
 
- Mounting Type :
 - Through Hole
 
- Operating Temperature :
 - -55°C ~ 175°C (TJ)
 
- Package / Case :
 - TO-247-3
 
- Part Status :
 - Obsolete
 
- Power - Max :
 - 434 W
 
- Reverse Recovery Time (trr) :
 - 259 ns
 
- Supplier Device Package :
 - TO-247-3
 
- Switching Energy :
 - 8.8mJ (on), 3.2mJ (off)
 
- Td (on/off) @ 25°C :
 - 28.8ns/117ns
 
- Test Condition :
 - 600V, 75A, 4.7Ohm, 15V
 
- Vce(on) (Max) @ Vge, Ic :
 - 2.11V @ 15V, 75A
 
- Voltage - Collector Emitter Breakdown (Max) :
 - 950 V
 
- Datasheets
 - FGY75T95SQDT
 
Manufacturer related products
Catalog related products
related products
| Part | Manufacturer | Stock | Description | 
|---|---|---|---|
| FGY75N60SMD | Rochester Electronics | 5,800 | IGBT 600V 150A 750W POWER-247 | 
| FGY75N60SMD | Rochester Electronics | 5,800 | INSULATED GATE BIPOLAR TRANSISTO | 
| FGY75T120SQDN | onsemi | 5,800 | IGBT 1200V 75A UFS | 
| FGY75T95LQDT | onsemi | 195 | IGBT 950V 75A | 



                                                                                                                    




