FGA30N65SMD
- Mfr.Part #
- FGA30N65SMD
- Manufacturer
- Rochester Electronics
- Package/Case
- -
- Datasheet
- Download
- Description
- INSULATED GATE BIPOLAR TRANSISTO
- Manufacturer :
- Rochester Electronics
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 60 A
- Current - Collector Pulsed (Icm) :
- 90 A
- Gate Charge :
- 87 nC
- IGBT Type :
- Field Stop
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-3P-3, SC-65-3
- Part Status :
- Active
- Power - Max :
- 300 W
- Reverse Recovery Time (trr) :
- 35 ns
- Supplier Device Package :
- TO-3PN
- Switching Energy :
- 716µJ (on), 208µJ (off)
- Td (on/off) @ 25°C :
- 14ns/102ns
- Test Condition :
- 400V, 30A, 6Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 30A
- Voltage - Collector Emitter Breakdown (Max) :
- 650 V
- Datasheets
- FGA30N65SMD
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
FGA3060ADF | Rochester Electronics | 1,800 | IGBT TRENCH/FS 600V 60A TO3PN |
FGA3060ADF | Rochester Electronics | 368 | INSULATED GATE BIPOLAR TRANSISTO |
FGA30N120FTDTU | onsemi | 5,800 | IGBT 1200V 60A 339W TO3P |
FGA30N60LSDTU | onsemi | 439 | IGBT TRENCH/FS 600V 60A TO3P |
FGA30N65SMD | onsemi | 5,800 | IGBT FIELD STOP 650V 60A TO3PN |
FGA30S120P | onsemi | 5,800 | IGBT TRENCH/FS 1300V 60A TO3PN |
FGA30S120P | Rochester Electronics | 5,800 | INSULATED GATE BIPOLAR TRANSISTO |
FGA30T65SHD | Rochester Electronics | 30,000 | IGBT TRENCH/FS 650V 60A TO3PN |
FGA30T65SHD | Rochester Electronics | 28,165 | INSULATED GATE BIPOLAR TRANSISTO |