BSM10GP120B9BOSA1

Mfr.Part #
BSM10GP120B9BOSA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
Download
Description
IGBT MODULE 1200V
Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Configuration :
Three Phase Inverter
Current - Collector (Ic) (Max) :
20 A
Current - Collector Cutoff (Max) :
500 µA
IGBT Type :
-
Input :
Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce :
600 pF @ 25 V
Mounting Type :
Chassis Mount
NTC Thermistor :
Yes
Operating Temperature :
-40°C ~ 125°C
Package / Case :
Module
Part Status :
Last Time Buy
Power - Max :
100 W
Supplier Device Package :
Module
Vce(on) (Max) @ Vge, Ic :
2.85V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max) :
1200 V
Datasheets
BSM10GP120B9BOSA1

Manufacturer related products

Catalog related products

related products

Part Manufacturer Stock Description
BSM1-C Panduit Corporation 5,800 CONN SPLICE 18-20 AWG CRIMP
BSM1-X Panduit Corporation 5,800 CONN SPLICE 18-20 AWG CRIMP
BSM100 Brady Corporation 5,800 RUG) BSM100 RUG, 36"X100'
BSM100GAL120DLCKHOSA1 Infineon Technologies 5,800 IGBT MOD 1200V 205A 835W
BSM100GB120DLCHOSA1 Rochester Electronics 30 BSM100GB120 - INSULATED GATE BIP
BSM100GB120DLCHOSA1 Infineon Technologies 5,800 IGBT MOD 1200V 100A 830W
BSM100GB120DLCKHOSA1 Infineon Technologies 5,800 IGBT MOD 1200V 100A 830W
BSM100GB120DN2B2HOSA1 Rochester Electronics 17 IGBT MODULE
BSM100GB120DN2FE325HOSA1 Rochester Electronics 60 BSM100GB120DN2 - IGBT MODULE
BSM100GB120DN2HOSA1 Rochester Electronics 1,840 MEDIUM POWER 62MM
BSM100GB120DN2HOSA1 Infineon Technologies 5,800 IGBT MOD 1200V 150A 800W
BSM100GB120DN2K Rochester Electronics 5,800 INSULATED GATE BIPOLAR TRANSISTO
BSM100GB120DN2KHOSA1 Infineon Technologies 5,800 IGBT MOD 1200V 145A 700W
BSM100GB120DN2KHOSA1 Rochester Electronics 330 MEDIUM POWER 34MM
BSM100GB120DN2S7HOSA1 Rochester Electronics 30 INSULATED GATE BIPOLAR TRANSISTO