HAT2173H-EL-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

25A (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

8V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

61 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4350 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SC-100, SOT-669

Part Status :

Active

Power Dissipation (Max) :

30W (Tc)

Rds On (Max) @ Id, Vgs :

15mOhm @ 12.5A, 10V

Supplier Device Package :

LFPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

6V @ 20mA