SI7792DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

40.6A (Ta), 60A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

Schottky Diode (Body)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

135 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4.735 nF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® SO-8

Part Status :

Obsolete

Power Dissipation (Max) :

6.25W (Ta), 104W (Tc)

Rds On (Max) @ Id, Vgs :

2.1mOhm @ 20A, 10V

Supplier Device Package :

PowerPAK® SO-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA