RJL6013DPE-WS#J3

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A (Ta)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

38 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1400 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

SC-83

Part Status :

Obsolete

Power Dissipation (Max) :

100W (Tc)

Rds On (Max) @ Id, Vgs :

810mOhm @ 5.5A, 10V

Supplier Device Package :

LDPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 1mA