HAT2185WPWS-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)

Drain to Source Voltage (Vdss) :

150 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.7 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

430 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

8-PowerWDFN

Part Status :

Obsolete

Power Dissipation (Max) :

20W (Tc)

Rds On (Max) @ Id, Vgs :

190mOhm @ 5A, 10V

Supplier Device Package :

8-WPAK (3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.5V @ 1mA