IPI120P04P4L03AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

120A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

234 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

15000 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Part Status :

Obsolete

Power Dissipation (Max) :

136W (Tc)

Rds On (Max) @ Id, Vgs :

3.4mOhm @ 100A, 10V

Supplier Device Package :

PG-TO262-3-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2.2V @ 340µA