NDFPD1N150CG

Manufacturer :

Rochester Electronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100mA (Ta)

Drain to Source Voltage (Vdss) :

1500 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.2 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

80 pF @ 30 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Part Status :

Obsolete

Power Dissipation (Max) :

2W (Ta), 20W (Tc)

Rds On (Max) @ Id, Vgs :

150Ohm @ 50mA, 10V

Supplier Device Package :

TO-220-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

-