SI1011X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

480mA (Ta)

Drain to Source Voltage (Vdss) :

12 V

Drive Voltage (Max Rds On, Min Rds On) :

1.2V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

4 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

62 pF @ 6 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-89, SOT-490

Part Status :

Obsolete

Power Dissipation (Max) :

190mW (Ta)

Rds On (Max) @ Id, Vgs :

640mOhm @ 400mA, 4.5V

Supplier Device Package :

SC-89-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±5V

Vgs(th) (Max) @ Id :

800mV @ 250µA