2N7635-GA

Manufacturer :

GeneSiC Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A (Tc) (165°C)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

-

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

324 pF @ 35 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 225°C (TJ)

Package / Case :

TO-257-3

Part Status :

Obsolete

Power Dissipation (Max) :

47W (Tc)

Rds On (Max) @ Id, Vgs :

415mOhm @ 4A

Supplier Device Package :

TO-257

Technology :

SiC (Silicon Carbide Junction Transistor)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

-