2SJ665-DL-E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

27A (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

74 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4200 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Obsolete

Power Dissipation (Max) :

1.65W (Ta), 65W (Tc)

Rds On (Max) @ Id, Vgs :

77mOhm @ 14A, 10V

Supplier Device Package :

SMP-FD

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.6V @ 1mA