SI8416DB-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

16A (Tc)

Drain to Source Voltage (Vdss) :

8 V

Drive Voltage (Max Rds On, Min Rds On) :

1.2V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

26 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1470 pF @ 4 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-UFBGA

Part Status :

Obsolete

Power Dissipation (Max) :

2.77W (Ta), 13W (Tc)

Rds On (Max) @ Id, Vgs :

23mOhm @ 1.5A, 4.5V

Supplier Device Package :

6-microfoot

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±5V

Vgs(th) (Max) @ Id :

800mV @ 250µA