- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 40A (Tc)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 185 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7785 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® SO-8
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 5.4W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs :
- 3mOhm @ 20A, 10V
- Supplier Device Package :
- PowerPAK® SO-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 1.6V @ 250µA
- Datasheets
- SI7380ADP-T1-GE3
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
SI7302DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 220V 8.4A PPAK1212-8 |
SI7308DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 60V 6A PPAK1212-8 |
SI7308DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 60V 6A PPAK1212-8 |
SI7309DN-T1-E3 | Vishay | 5,800 | MOSFET P-CH 60V 8A PPAK1212-8 |
SI7309DN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 60V 8A PPAK1212-8 |
SI7315DN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 150V 8.9A PPAK1212-8 |
SI7317DN-T1-GE3 | Vishay | 306 | MOSFET P-CH 150V 2.8A PPAK1212-8 |
SI7322ADN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 100V 15.1A PPAK |
SI7322DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 100V 18A PPAK 1212-8 |
SI7322DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 100V 18A PPAK1212-8 |
SI7326DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 30V 6.5A PPAK 1212-8 |
SI7326DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 6.5A PPAK 1212-8 |
SI7328DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 30V 35A PPAK 1212-8 |
SI7328DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 35A PPAK1212-8 |
SI7336ADP-T1-E3 | Vishay | 5,800 | MOSFET N-CH 30V 30A PPAK SO-8 |