SI1058X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.3A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

5.9 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

380 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-563, SOT-666

Part Status :

Obsolete

Power Dissipation (Max) :

236mW (Ta)

Rds On (Max) @ Id, Vgs :

91mOhm @ 1.3A, 4.5V

Supplier Device Package :

SC-89 (SOT-563F)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.55V @ 250µA