- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- -
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® SO-8
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- -
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- PowerPAK® SO-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- -
- Vgs(th) (Max) @ Id :
- -
- Datasheets
- SIR840DP-T1-GE3
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---|---|---|---|
SIR800ADP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 20V 50.2A/177A PPAK |
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SIR800DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 20V 50A PPAK SO-8 |
SIR800DP-T1-RE3 | Vishay | 5,800 | MOSFET N-CH 20V 50A PPAK SO-8 |
SIR802DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 20V 30A PPAK SO-8 |
SIR804DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 100V 60A PPAK SO-8 |
SIR808DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 25V 20A PPAK SO-8 |
SIR812DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 60A PPAK SO-8 |
SIR814DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 40V 60A PPAK SO-8 |
SIR818DP-T1-GE3 | Vishay | 1 | MOSFET N-CH 30V 50A PPAK SO-8 |
SIR820DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 40A PPAK SO-8 |
SIR826ADP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 80V 60A PPAK SO-8 |
SIR826BDP-T1-RE3 | Vishay | 5,800 | MOSFET N-CH 80V 19.8A/80.8A PPAK |
SIR826DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 80V 60A PPAK SO-8 |
SIR826DP-T1-RE3 | Vishay | 5,800 | MOSFET N-CH 80V 60A PPAK SO-8 |