SI5410DU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

32 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1350 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® ChipFET™ Single

Part Status :

Obsolete

Power Dissipation (Max) :

3.1W (Ta), 31W (Tc)

Rds On (Max) @ Id, Vgs :

18mOhm @ 6.6A, 10V

Supplier Device Package :

PowerPAK® ChipFET™ Single

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA