FDP6670AL

Mfr.Part #
FDP6670AL
Manufacturer
onsemi
Package/Case
-
Datasheet
Download
Description
MOSFET N-CH 30V 80A TO220-3
Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
80A (Ta)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds :
2440 pF @ 15 V
Mounting Type :
Through Hole
Operating Temperature :
-65°C ~ 175°C (TJ)
Package / Case :
TO-220-3
Part Status :
Obsolete
Power Dissipation (Max) :
68W (Tc)
Rds On (Max) @ Id, Vgs :
6.5mOhm @ 40A, 10V
Supplier Device Package :
TO-220-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3V @ 250µA
Datasheets
FDP6670AL

Manufacturer related products

Catalog related products

  • Micro Commercial Components (MCC)
    N-CHANNEL MOSFET SOT-523
  • Micro Commercial Components (MCC)
    N-CHANNEL MOSFET, D2-PAK
  • Micro Commercial Components (MCC)
    P-CHANNEL MOSFET,SOT-23
  • Micro Commercial Components (MCC)
    N-CHANNEL MOSFET SOT-23
  • Micro Commercial Components (MCC)
    N-CHANNEL MOSFET SOT-23

related products

Part Manufacturer Stock Description
FDP6030BL Rochester Electronics 19,200 POWER FIELD-EFFECT TRANSISTOR, 4
FDP6030BL Rochester Electronics 5,800 MOSFET N-CH 30V 40A TO220-3
FDP6030L Rochester Electronics 63,536 MOSFET N-CH 30V 48A TO220-3
FDP6030L onsemi 5,800 MOSFET N-CH 30V 48A TO220-3
FDP6035AL Rochester Electronics 106,637 MOSFET N-CH 30V 48A TO220-3
FDP6035AL onsemi 5,800 MOSFET N-CH 30V 48A TO220-3
FDP6035L Rochester Electronics 3,250 N-CHANNEL POWER MOSFET
FDP61N20 Rochester Electronics 5,800 MOSFET N-CH 200V 61A TO220-3
FDP61N20 Rochester Electronics 5,800 POWER FIELD-EFFECT TRANSISTOR, 6
FDP65N06 onsemi 196 MOSFET N-CH 60V 65A TO220-3
FDP6670AL Rochester Electronics 26,871 MOSFET N-CH 30V 80A TO220-3
FDP6676 Rochester Electronics 20,082 N-CHANNEL POWER MOSFET
FDP6676S Rochester Electronics 1,485 N-CHANNEL POWER MOSFET