NTD3813N-1G

Manufacturer :

Rochester Electronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9.6A (Ta), 51A (Tc)

Drain to Source Voltage (Vdss) :

16 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12.8 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

963 pF @ 12 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Part Status :

Obsolete

Power Dissipation (Max) :

1.2W (Ta), 34.9W (Tc)

Rds On (Max) @ Id, Vgs :

8.75mOhm @ 15A, 10V

Supplier Device Package :

I-PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2.5V @ 250µA