- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 9A (Tc)
- Drain to Source Voltage (Vdss) :
- 200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 27 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 755 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 69W (Tc)
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 4.5A, 5V
- Supplier Device Package :
- TO-220-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2V @ 250µA
- Datasheets
- IRL630A
Manufacturer related products
Catalog related products
related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| IRL60B216 | Infineon Technologies | 5,800 | MOSFET N-CH 60V 195A TO220AB |
| IRL60HS118 | Infineon Technologies | 5,800 | MOSFET N-CH 60V 18.5A 6PQFN |
| IRL60HS118 | Rochester Electronics | 5,800 | IRL60HS118 - 12V-300V N-CHANNEL |
| IRL60S216 | Infineon Technologies | 5,800 | MOSFET N-CH 60V 195A D2PAK |
| IRL60SC216ARMA1 | Infineon Technologies | 5,800 | MOSFET N-CH 60V 324A TO263-7 |
| IRL60SL216 | Infineon Technologies | 983 | MOSFET N-CH 60V 195A TO262-3 |
| IRL610A | Rochester Electronics | 5,800 | MOSFET N-CH 200V 3.3A TO220-3 |
| IRL610A | onsemi | 5,800 | MOSFET N-CH 200V 3.3A TO220-3 |
| IRL620 | Vishay | 5,800 | MOSFET N-CH 200V 5.2A TO220AB |
| IRL620A | Rochester Electronics | 1,890 | N-CHANNEL POWER MOSFET |
| IRL620PBF | Vishay | 2 | MOSFET N-CH 200V 5.2A TO220AB |
| IRL620PBF-BE3 | Vishay | 990 | MOSFET N-CH 200V 5.2A TO220AB |
| IRL620S | Vishay | 5,800 | MOSFET N-CH 200V 5.2A D2PAK |
| IRL620SPBF | Vishay | 281 | MOSFET N-CH 200V 5.2A D2PAK |
| IRL620STRL | Vishay | 5,800 | MOSFET N-CH 200V 5.2A D2PAK |








