- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 6A (Tc)
- Drain to Source Voltage (Vdss) :
- 400 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 625 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 73W (Tc)
- Rds On (Max) @ Id, Vgs :
- 1Ohm @ 3A, 10V
- Supplier Device Package :
- I2PAK (TO-262)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FQI6N40CTU
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FQI6N15TU | onsemi | 5,800 | MOSFET N-CH 150V 6.4A I2PAK |
| FQI6N40CTU | Rochester Electronics | 5,800 | MOSFET N-CH 400V 6A I2PAK |
| FQI6N50TU | Rochester Electronics | 1,650 | MOSFET N-CH 500V 5.5A I2PAK |
| FQI6N50TU | onsemi | 5,800 | MOSFET N-CH 500V 5.5A I2PAK |
| FQI6N60CTU | Rochester Electronics | 1,844 | MOSFET N-CH 600V 5.5A I2PAK |
| FQI6N60CTU | onsemi | 5,800 | MOSFET N-CH 600V 5.5A I2PAK |








