IRF6602

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A (Ta), 48A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

18 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1420 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

DirectFET™ Isometric MQ

Part Status :

Obsolete

Power Dissipation (Max) :

2.3W (Ta), 42W (Tc)

Rds On (Max) @ Id, Vgs :

13mOhm @ 11A, 10V

Supplier Device Package :

DIRECTFET™ MQ

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.3V @ 250µA