SCTWA35N65G2VAG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

45A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

18V, 20V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

73 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

1370 pF @ 400 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-3

Part Status :

Active

Power Dissipation (Max) :

208W (Tc)

Rds On (Max) @ Id, Vgs :

72mOhm @ 20A, 20V

Supplier Device Package :

TO-247 Long Leads

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+20V, -5V

Vgs(th) (Max) @ Id :

3.2V @ 1mA