- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 110A (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6655 pF @ 30 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Part Status :
- Active
- Power Dissipation (Max) :
- 176W (Tj)
- Rds On (Max) @ Id, Vgs :
- 2.7mOhm @ 80A, 10V
- Supplier Device Package :
- D²PAK-3 (TO-263-3)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- NTBS2D7N06M7
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Part | Manufacturer | Stock | Description |
---|---|---|---|
NTBS2D7N06M7 | Rochester Electronics | 3,850 | POWER MOSFET, N-CHANNEL, STANDAR |
NTBS9D0N10MC | onsemi | 5,800 | MOSFET N-CH 100V 14A/60A TO263 |