- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 24A (Tc)
- Drain to Source Voltage (Vdss) :
- 600 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 120 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2744 pF @ 100 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerTDFN
- Part Status :
- Active
- Power Dissipation (Max) :
- 202W (Tc)
- Rds On (Max) @ Id, Vgs :
- 141mOhm @ 13A, 10V
- Supplier Device Package :
- PowerPAK® 8 x 8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- SIHH26N60EF-T1-GE3
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SIHH068N60E-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 600V 34A PPAK 8 X 8 |
| SIHH070N60EF-T1GE3 | Vishay | 5,800 | MOSFET N-CH 600V 36A PPAK 8 X 8 |
| SIHH080N60E-T1-GE3 | Vishay | 50 | E SERIES POWER MOSFET POWERPAK 8 |
| SIHH100N60E-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 600V 28A PPAK 8 X 8 |
| SIHH105N60EF-T1GE3 | Vishay | 5,800 | EF SERIES POWER MOSFET WITH FAST |
| SIHH11N60E-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 600V 11A PPAK 8 X 8 |
| SIHH11N60EF-T1-GE3 | Vishay | 1,857 | MOSFET N-CH 600V 11A PPAK 8 X 8 |
| SIHH11N65E-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 650V 12A PPAK 8 X 8 |
| SIHH11N65EF-T1-GE3 | Vishay | 23 | MOSFET N-CH 650V 11A PPAK 8 X 8 |
| SIHH120N60E-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 600V 24A PPAK 8 X 8 |
| SIHH125N60EF-T1GE3 | Vishay | 40 | MOSFET N-CH 600V 23A PPAK 8 X 8 |
| SIHH14N60E-T1-GE3 | Vishay | 1 | MOSFET N-CH 600V 16A PPAK 8 X 8 |
| SIHH14N60EF-T1-GE3 | Vishay | 1,033 | MOSFET N-CH 600V 15A PPAK 8 X 8 |
| SIHH14N65E-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 650V 15A PPAK 8 X 8 |
| SIHH14N65EF-T1-GE3 | Vishay | 50 | MOSFET N-CH 650V 15A PPAK 8 X 8 |
